DiodesZetex DMN Type N-Channel MOSFET, 407 mA, 60 V Enhancement, 3-Pin X1-DFN DMN62D4LFB-7B
- RS庫存編號:
- 222-2846
- 製造零件編號:
- DMN62D4LFB-7B
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 50 件）*
TWD270.00
(不含稅)
TWD283.50
(含稅)
訂單超過 $1,300.00 免費送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 50 - 450 | TWD5.40 | TWD270.00 |
| 500 - 950 | TWD5.20 | TWD260.00 |
| 1000 - 2450 | TWD5.10 | TWD255.00 |
| 2500 - 4950 | TWD5.00 | TWD250.00 |
| 5000 + | TWD4.90 | TWD245.00 |
* 參考價格
- RS庫存編號:
- 222-2846
- 製造零件編號:
- DMN62D4LFB-7B
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 407mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | DMN | |
| Package Type | X1-DFN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 1.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.2W | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.22mm | |
| Length | 0.64mm | |
| Standards/Approvals | No | |
| Width | 1.04 mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 407mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series DMN | ||
Package Type X1-DFN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 1.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.2W | ||
Maximum Operating Temperature 150°C | ||
Height 0.22mm | ||
Length 0.64mm | ||
Standards/Approvals No | ||
Width 1.04 mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex N-channel enhancement mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
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