onsemi NTMT110N Type N-Channel MOSFET, 30 A, 650 V Enhancement, 4-Pin PQFN
- RS庫存編號:
- 221-6735
- 製造零件編號:
- NTMT110N65S3HF
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
TWD420,300.00
(不含稅)
TWD441,300.00
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 3,000 個，準備發貨
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD140.10 | TWD420,300.00 |
| 6000 + | TWD137.30 | TWD411,900.00 |
* 參考價格
- RS庫存編號:
- 221-6735
- 製造零件編號:
- NTMT110N65S3HF
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PQFN | |
| Series | NTMT110N | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 62nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 240W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 8.1mm | |
| Length | 8.1mm | |
| Standards/Approvals | No | |
| Width | 1.1 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PQFN | ||
Series NTMT110N | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 62nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 240W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Height 8.1mm | ||
Length 8.1mm | ||
Standards/Approvals No | ||
Width 1.1 mm | ||
Automotive Standard No | ||
The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Ultra low gate charge
low effective output capacitance 522 pF
100% avalanche tested
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