Infineon CoolMOS N-Channel MOSFET & Diode, 6.8 A, 650 V Enhancement, 3-Pin TO-251 IPS60R1K0CEAKMA1
- RS庫存編號:
- 220-7439
- 製造零件編號:
- IPS60R1K0CEAKMA1
- 製造商:
- Infineon
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- RS庫存編號:
- 220-7439
- 製造零件編號:
- IPS60R1K0CEAKMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 6.8A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS | |
| Package Type | TO-251 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 900mV | |
| Maximum Power Dissipation Pd | 61W | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 2.4mm | |
| Length | 6.73mm | |
| Height | 6.22mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 6.8A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS | ||
Package Type TO-251 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 900mV | ||
Maximum Power Dissipation Pd 61W | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 2.4mm | ||
Length 6.73mm | ||
Height 6.22mm | ||
Automotive Standard No | ||
The Infineon Cool MOS CE is suitable for hard and soft switching applications and as modern super junction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V Cool MOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.
Narrow margins between typical and max R DS(on)
Reduced energy stored in output capacitance (E oss)
Good body diode ruggedness and reduced reverse recovery charge (Q rr)
Optimized integrated R g
Low conduction losses
Low switching losses
Suitable for hard and soft switching
Easy controllable switching behaviour
Improved efficiency and consequent reduction of power consumption
Less design in effort
Easy to use
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