Infineon C7 GOLD Type N-Channel MOSFET & Diode, 83 A, 650 V Enhancement, 10-Pin HDSOP IPDD60R080G7XTMA1

RS庫存編號:: 220-7418
製造零件編號:: IPDD60R080G7XTMA1
製造商:: Infineon

Infineon C7 GOLD Type N-Channel MOSFET & Diode, 83 A, 650 V Enhancement, 10-Pin HDSOP IPDD60R080G7XTMA1

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TWD224.70

訂單超過 $1,300.00 免費送貨

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RS庫存編號:: 220-7418
製造零件編號:: IPDD60R080G7XTMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	83A
	Maximum Drain Source Voltage Vds	650V
	Series	C7 GOLD
	Package Type	HDSOP
	Mount Type	Surface
	Pin Count	10
	Maximum Drain Source Resistance Rds	80mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	174W
	Forward Voltage Vf	0.8V
	Typical Gate Charge Qg @ Vgs	42nC
	Height	21.11mm
	Width	2.35 mm
	Length	6.6mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 83A
	Maximum Drain Source Voltage Vds 650V
	Series C7 GOLD
	Package Type HDSOP
	Mount Type Surface
	Pin Count 10
	Maximum Drain Source Resistance Rds 80mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 174W
	Forward Voltage Vf 0.8V
	Typical Gate Charge Qg @ Vgs 42nC
	Height 21.11mm
	Width 2.35 mm
	Length 6.6mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPDD60R080G7XTMA1

The Infineon technologies introduces Double DPAK (DDPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology 600V Cool MOS G7 super junction (SJ) MOSFETis combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.

Gives best-in-class FOM RDS(on) x Eoss and RDS(on) x Qg

Innovative top-side cooling concept

Inbuilt 4th pin Kelvin source configuration and low parasitic source inductance

TCOB capability of >> 2.000 cycles, MSL1 compliant and total Pb-free

Enabling highest energy efficiency

Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits

Reduced parasitic source inductance improves e efficiency and ease-of-use

Enables higher power density solutions

Exceeding the highest quality standards

Infineon C7 GOLD Type N-Channel MOSFET & Diode, 83 A, 650 V Enhancement, 10-Pin HDSOP IPDD60R080G7XTMA1

訂單超過 $1,300.00 免費送貨

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