Infineon CoolMOS Type N-Channel MOSFET & Diode, 51 A, 650 V Enhancement, 3-Pin TO-252
- RS庫存編號:
- 220-7406
- 製造零件編號:
- IPD60R170CFD7ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 2500 件）*
TWD96,000.00
(不含稅)
TWD100,800.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月16日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 10000 | TWD38.40 | TWD96,000.00 |
| 12500 + | TWD37.20 | TWD93,000.00 |
* 參考價格
- RS庫存編號:
- 220-7406
- 製造零件編號:
- IPD60R170CFD7ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 51A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-252 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 170mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Power Dissipation Pd | 76W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Height | 2.41mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 51A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-252 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 170mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Power Dissipation Pd 76W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Height 2.41mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Automotive Standard No | ||
The Infineon 600V Cool MOS CFD7 is Infineon’s latest high voltage super junction MOSFET technology with integrated fast body diode, completing the Cool MOS 7 series. Cool MOS CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.
Ultra-fast body diode
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Lowest FOM RDS(on) x Qg and Eoss
Best-in-class RDS(on)/package combinations
Best-in-class hard commutation ruggedness
Highest reliability for resonant topologies
Highest efficiency with outstanding ease-of-use/performance trade-off
Enabling increased power density solutions
相關連結
- Infineon CoolMOS Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-252 IPD60R170CFD7ATMA1
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 IPD60R280CFD7ATMA1
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 IPD60R280P7ATMA1
- Infineon CoolMOS CE Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS CE Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS C6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 IPD60R380C6ATMA1