Infineon HEXFET Type P-Channel MOSFET, 38 A, 100 V Enhancement, 3-Pin TO-263 AUIRF5210STRL
- RS庫存編號:
- 218-2972
- 製造零件編號:
- AUIRF5210STRL
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD1,079.00
(不含稅)
TWD1,132.95
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 100 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 195 | TWD215.80 | TWD1,079.00 |
| 200 - 395 | TWD210.80 | TWD1,054.00 |
| 400 + | TWD197.20 | TWD986.00 |
* 參考價格
- RS庫存編號:
- 218-2972
- 製造零件編號:
- AUIRF5210STRL
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.6V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 3.1W | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.65 mm | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.6V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 3.1W | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Maximum Operating Temperature 150°C | ||
Width 9.65 mm | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon P-channel automotive MOSFET. It is specifically designed for automotive applications. This cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
Advanced Process Technology
P-Channel MOSFET
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
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