Infineon Isolated CoolSiC Type N-Channel MOSFET, 50 A, 1.2 kV, 2-Pin AG-EASY1B FF23MR12W1M1B11BOMA1
- RS庫存編號:
- 217-7181
- 製造零件編號:
- FF23MR12W1M1B11BOMA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 件)*
TWD2,937.00
(不含稅)
TWD3,083.85
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 55 個,準備發貨
單位 | 每單位 |
|---|---|
| 1 - 5 | TWD2,937.00 |
| 6 - 11 | TWD2,863.00 |
| 12 + | TWD2,819.00 |
* 參考價格
- RS庫存編號:
- 217-7181
- 製造零件編號:
- FF23MR12W1M1B11BOMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Series | CoolSiC | |
| Package Type | AG-EASY1B | |
| Mount Type | Chassis | |
| Pin Count | 2 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 20mW | |
| Forward Voltage Vf | 5.65V | |
| Minimum Operating Temperature | -40°C | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Length | 62.8mm | |
| Width | 33.8 mm | |
| Height | 16.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Series CoolSiC | ||
Package Type AG-EASY1B | ||
Mount Type Chassis | ||
Pin Count 2 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 20mW | ||
Forward Voltage Vf 5.65V | ||
Minimum Operating Temperature -40°C | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Length 62.8mm | ||
Width 33.8 mm | ||
Height 16.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon EasyDUAL 1B 1200 V / 23 mΩ half bridge module with CoolSiC MOSFET, integrated NTC temperature sensor and PressFIT Contact Technology
High current density
Best in class switching and conduction losses
Low inductive design
RoHS-compliant modules
相關連結
- Infineon Isolated CoolSiC Type N-Channel MOSFET 1.2 kV, 2-Pin AG-EASY1B
- Infineon DDB2U MOSFET AG-EASY1B-1 DDB2U20N12W1RFB11BPSA1
- Infineon DDB2U MOSFET AG-EASY1B-1 DDB2U40N12W1RFB11BPSA1
- Infineon FS35R12W1T7BOMA1 IGBT, 35 A 1200 V AG-EASY1B-711
- Infineon FS35R12W1T7B11BOMA1 IGBT, 35 A 1200 V AG-EASY1B-711
- Infineon FP15R12W1T7BOMA1 IGBT, 15 A 1200 V AG-EASY1B-711
- Infineon FS55MR12W1M1H_B11 Type N-Channel MOSFET 1200 V Enhancement, 8-Pin AG-EASY1B
- Infineon EasyDUAL Type N-Channel MOSFET 1200 V Enhancement, 23-Pin AG-EASY1B FF17MR12W1M1HB11BPSA1
