Infineon Isolated CoolSiC Type N-Channel MOSFET, 50 A, 1.2 kV, 2-Pin AG-EASY1B
- RS庫存編號:
- 217-7180
- 製造零件編號:
- FF23MR12W1M1B11BOMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 托盤，共 24 件）*
TWD68,697.60
(不含稅)
TWD72,132.48
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 48 個，準備發貨
單位 | 每單位 | 每托盤* |
|---|---|---|
| 24 - 24 | TWD2,862.40 | TWD68,697.60 |
| 48 + | TWD2,776.50 | TWD66,636.00 |
* 參考價格
- RS庫存編號:
- 217-7180
- 製造零件編號:
- FF23MR12W1M1B11BOMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Series | CoolSiC | |
| Package Type | AG-EASY1B | |
| Mount Type | Chassis | |
| Pin Count | 2 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 5.65V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 20mW | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Height | 16.4mm | |
| Width | 33.8 mm | |
| Length | 62.8mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Series CoolSiC | ||
Package Type AG-EASY1B | ||
Mount Type Chassis | ||
Pin Count 2 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 5.65V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 20mW | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Height 16.4mm | ||
Width 33.8 mm | ||
Length 62.8mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon EasyDUAL 1B 1200 V / 23 mΩ half bridge module with CoolSiC MOSFET, integrated NTC temperature sensor and PressFIT Contact Technology
High current density
Best in class switching and conduction losses
Low inductive design
RoHS-compliant modules
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