Infineon IPP Type N-Channel MOSFET, 137 A, 100 V Enhancement, 3-Pin TO-220
- RS庫存編號:
- 217-2554
- 製造零件編號:
- IPP045N10N3GXKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 50 件）*
TWD2,050.00
(不含稅)
TWD2,152.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 350 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD41.00 | TWD2,050.00 |
| 100 - 150 | TWD40.20 | TWD2,010.00 |
| 200 + | TWD39.40 | TWD1,970.00 |
* 參考價格
- RS庫存編號:
- 217-2554
- 製造零件編號:
- IPP045N10N3GXKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 137A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IPP | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 88nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 214W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.36mm | |
| Standards/Approvals | No | |
| Width | 4.57 mm | |
| Height | 29.95mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 137A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IPP | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 88nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 214W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 10.36mm | ||
Standards/Approvals No | ||
Width 4.57 mm | ||
Height 29.95mm | ||
Automotive Standard No | ||
The Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit).
Excellent switching performance World's lowest R DS(on)
Very low Q g and Q gd
Excellent gate charge x R DS(on) product (FOM)
RoHS compliant-halogen free
MSL1 rated 2
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