Infineon IPD Type N-Channel MOSFET, 2 A, 800 V Enhancement, 3-Pin TO-252 IPD80R2K7C3AATMA1

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包裝方式:
RS庫存編號:
217-2532
製造零件編號:
IPD80R2K7C3AATMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2A

Maximum Drain Source Voltage Vds

800V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.7Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

12nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

42W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Length

6.73mm

Width

6.22 mm

Standards/Approvals

No

Height

2.41mm

Automotive Standard

AEC-Q101

The Infineon CoolMOS™ C3A technology was designed to meet the growing demands of higher system voltages in the area of electric vehicles, such as PHEVs and BEV.

Best-in-class quality and reliability

Higher breakdown voltage

High peak current capability

Automotive AEC Q101 qualified

Green package (RoHS compliant)

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