Infineon IPD Type P-Channel MOSFET, 50 A, 40 V Enhancement, 3-Pin TO-252 IPD50P04P413ATMA2
- RS庫存編號:
- 217-2518
- 製造零件編號:
- IPD50P04P413ATMA2
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 2500 件）*
TWD45,500.00
(不含稅)
TWD47,775.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 5,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 2500 | TWD18.20 | TWD45,500.00 |
| 5000 + | TWD17.50 | TWD43,750.00 |
* 參考價格
- RS庫存編號:
- 217-2518
- 製造零件編號:
- IPD50P04P413ATMA2
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 58W | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Forward Voltage Vf | -1.3V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 58W | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Forward Voltage Vf -1.3V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon IPD Series MOSFET, 40V Maximum Drain Source Voltage, 50A Maximum Continuous Drain Current - IPD50P04P413ATMA2
This MOSFET is a P-channel enhancement device designed to control high currents in demanding environments, providing a semiconductor switch capable of handling substantial drain-source loads while tolerating wide temperature ranges.
Features and Benefits:
• 40V drain-source rating enables medium-voltage switching applications
• 50A continuous drain capability supports high-current loads
• 12.6mΩ Rds(on) minimises conduction losses for efficient operation
• 58W maximum power dissipation allows sustained power handling
• 39nC typical gate charge yields predictable switching energy requirements
• 20V gate voltage rating permits robust gate-drive margins
• 50A continuous drain capability supports high-current loads
• 12.6mΩ Rds(on) minimises conduction losses for efficient operation
• 58W maximum power dissipation allows sustained power handling
• 39nC typical gate charge yields predictable switching energy requirements
• 20V gate voltage rating permits robust gate-drive margins
Applications
• Suitable for automotive power distribution modules
• Ideal for high-current load switching in control units
• Used with thermal management systems for elevated-temperature operation
• Can be used for battery protection and power-path control
• Compatible with through-hole mounting on power assemblies
• Ideal for high-current load switching in control units
• Used with thermal management systems for elevated-temperature operation
• Can be used for battery protection and power-path control
• Compatible with through-hole mounting on power assemblies
What temperature range can it reliably operate within?
It is specified to operate from -55°C up to 175°C.
What package type and mounting method are used?
It is supplied in a TO-252 package intended for through-hole mounting.
How does the gate-charge figure affect switching design?
A 39nC gate charge indicates the gate-drive energy and influences driver sizing and switching losses.
Is it suitable for use in automotive electronic systems?
It conforms to the AEC‑Q101 automotive device standard for suitability in vehicle environments.
What is the maximum allowable gate-to-source voltage?
The maximum VGS rating is 20V.
相關連結
- Infineon IPD Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 IPD50P04P413ATMA2
- Infineon IPD Type P-Channel MOSFET -30 V Enhancement PG-TO-252
- Infineon IPD Type P-Channel MOSFET -30 V Enhancement PG-TO-252 IPD50P03P4L11ATMA2
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement TO-252
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement TO-252 IPD85P04P407ATMA2
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252 IPD50P04P4L11ATMA2
- Infineon IPD Type P-Channel MOSFET, 15.1 A P TO-252