Infineon CoolMOS Type N-Channel MOSFET, 7.2 A, 650 V N, 3-Pin TO-220 IPA65R1K0CEXKSA1
- RS庫存編號:
- 217-2487
- Distrelec 貨號:
- 304-39-405
- 製造零件編號:
- IPA65R1K0CEXKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 20 件）*
TWD408.00
(不含稅)
TWD428.40
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 620 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 80 | TWD20.40 | TWD408.00 |
| 100 + | TWD20.20 | TWD404.00 |
* 參考價格
- RS庫存編號:
- 217-2487
- Distrelec 貨號:
- 304-39-405
- 製造零件編號:
- IPA65R1K0CEXKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.2A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 68W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 15.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.9 mm | |
| Standards/Approvals | No | |
| Length | 10.65mm | |
| Height | 29.75mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.2A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 68W | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 15.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 4.9 mm | ||
Standards/Approvals No | ||
Length 10.65mm | ||
Height 29.75mm | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
Extremely low losses due to very low FOMRds on*Qg and Eoss
Very high commutation ruggedness
Easy-to-use/drive
Pb-free plating, Halogen free mold compound
Qualified for standard grade applications
相關連結
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