Infineon CoolMOS C7 Type N-Channel MOSFET, 40 A, 600 V Enhancement, 3-Pin TO-247

RS庫存編號:: 215-2567
製造零件編號:: IPW60R080P7XKSA1
製造商:: Infineon

Infineon CoolMOS C7 Type N-Channel MOSFET, 40 A, 600 V Enhancement, 3-Pin TO-247

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可享批量折扣

小計（1 管，共 30 件）*

TWD2,505.00

(不含稅)

TWD2,630.40

訂單超過 $1,300.00 免費送貨

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單位	每單位	每管*
30 - 30	TWD83.50	TWD2,505.00
60 - 90	TWD81.70	TWD2,451.00
120 +	TWD80.10	TWD2,403.00

* 參考價格

RS庫存編號:: 215-2567
製造零件編號:: IPW60R080P7XKSA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-247
	Series	CoolMOS C7
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	80mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	51nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	129W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-247
	Series CoolMOS C7
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 80mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 51nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 129W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPW60R080P7XKSA1

The Infineon 600V Cool MOS™ P7 is the successor to the 600V Cool MOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the Cool MOS™ 7th generation platform ensure its high efficiency. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching application seven more efficient, more compact and much cooler.

Suitable for hard and soft switching (PFC and LLC) due to an outstanding  commutation ruggedness

Excellent ESD robustness >2kV(HBM) for all products

Significant reduction of switching and conduction losses

Wide portfolio in through hole and surface mount packages

Infineon CoolMOS C7 Type N-Channel MOSFET, 40 A, 600 V Enhancement, 3-Pin TO-247

訂單超過 $1,300.00 免費送貨

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