Infineon OptiMOS-T2 Type N-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-220

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小計(1 管,共 50 件)*

TWD3,280.00

(不含稅)

TWD3,444.00

(含稅)

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每單位
每管*
50 - 50TWD65.60TWD3,280.00
100 - 150TWD64.20TWD3,210.00
200 +TWD62.80TWD3,140.00

* 參考價格

RS庫存編號:
215-2547
製造零件編號:
IPP80N06S407AKSA2
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

60V

Series

OptiMOS-T2

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

7.1mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

79W

Typical Gate Charge Qg @ Vgs

56nC

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS® -T2 Power-Transistor series has 60V maximum drain source voltage with TO-220 package type. It is N-Channel with 7.1 mΩ max maximum drain source resistance.

N-channel - Enhancement mode

AEC Q101 qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

Green Product (RoHS compliant)

100% Avalanche tested

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