Infineon 600V CoolMOS C7 Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-263

RS庫存編號:: 215-2497
製造零件編號:: IPB60R180C7ATMA1
製造商:: Infineon

Infineon 600V CoolMOS C7 Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-263

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 1000 件）*

TWD38,900.00

(不含稅)

TWD40,840.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年5月27日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
1000 - 4000	TWD38.90	TWD38,900.00
5000 +	TWD38.10	TWD38,100.00

* 參考價格

RS庫存編號:: 215-2497
製造零件編號:: IPB60R180C7ATMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	13A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-263
	Series	600V CoolMOS C7
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	180mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.9V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	68W
	Typical Gate Charge Qg @ Vgs	24nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	10.31mm
	Width	4.57 mm
	Height	15.88mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 13A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-263
	Series 600V CoolMOS C7
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 180mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.9V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 68W
	Typical Gate Charge Qg @ Vgs 24nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 10.31mm
	Width 4.57 mm
	Height 15.88mm
	Automotive Standard No

Datasheet - IPB60R180C7ATMA1

The Infineon 600V Cool MOS™ C7 super junction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the Cool MOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyper data centres and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by Cool MOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V Cool MOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ∼10% for PSU energy loss.

Reduced switching loss parameters such as Q G, C oss, E oss

Best-in-class figure of merit Q G*R DS(on)

Increased switching frequency

Best R (on)*A in the world

Rugged body diode

Infineon 600V CoolMOS C7 Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-263

訂單超過 $1,300.00 免費送貨

相關連結