Infineon OptiMOS 5 Type N-Channel MOSFET, 80 A, 80 V Enhancement, 3-Pin TO-220
- RS庫存編號:
- 214-9082
- 製造零件編號:
- IPP052N08N5AKSA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 管,共 50 件)*
TWD1,880.00
(不含稅)
TWD1,974.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 1,200 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD37.60 | TWD1,880.00 |
| 100 - 150 | TWD36.40 | TWD1,820.00 |
| 200 + | TWD35.30 | TWD1,765.00 |
* 參考價格
- RS庫存編號:
- 214-9082
- 製造零件編號:
- IPP052N08N5AKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-220 | |
| Series | OptiMOS 5 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.36mm | |
| Width | 4.57 mm | |
| Height | 9.45mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-220 | ||
Series OptiMOS 5 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.36mm | ||
Width 4.57 mm | ||
Height 9.45mm | ||
Automotive Standard No | ||
The Infineon range offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and Strong IRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs. These latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies.
Qualified according to JEDEC1 for target applications
100% avalanche tested
相關連結
- Infineon OptiMOS 5 Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-220 IPP052N08N5AKSA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-220 IPP057N08N3GXKSA1
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-220 IPP80N08S2L07AKSA1
