製造零件編號

Infineon OptiMOS 5 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 7-Pin TO-263 IPB024N10N5ATMA1

RS庫存編號:: 214-9009
製造零件編號:: IPB024N10N5ATMA1
製造商:: Infineon

Infineon OptiMOS 5 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 7-Pin TO-263 IPB024N10N5ATMA1

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可享批量折扣

小計（1 包，共 5 件）*

TWD684.00

(不含稅)

TWD718.20

訂單超過 $1,300.00 免費送貨

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285 件準備從其他地點送貨

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單位	每單位	每包*
5 - 245	TWD136.80	TWD684.00
250 - 495	TWD133.40	TWD667.00
500 +	TWD125.00	TWD625.00

* 參考價格

RS庫存編號:: 214-9009
製造零件編號:: IPB024N10N5ATMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	180A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-263
	Series	OptiMOS 5
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	2.4mΩ
	Channel Mode	Enhancement
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 180A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-263
	Series OptiMOS 5
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 2.4mΩ
	Channel Mode Enhancement
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPB024N10N5ATMA1

The Infineon OptiMOS 5 100V power MOSFET is especially designed for synchronous rectification in telecom blocks including Or-ing, hot swap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.

100% avalanche tested

Qualified according to JEDEC for target applications

Infineon OptiMOS 5 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 7-Pin TO-263 IPB024N10N5ATMA1

訂單超過 $1,300.00 免費送貨

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