Infineon OptiMOS 3 N-Channel MOSFET, 10.9 A, 250 V Enhancement, 8-Pin TSDSON BSZ16DN25NS3GATMA1
- RS庫存編號:
- 214-8988
- 製造零件編號:
- BSZ16DN25NS3GATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 10 件）*
TWD593.00
(不含稅)
TWD622.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 70 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 1240 | TWD59.30 | TWD593.00 |
| 1250 - 2490 | TWD57.90 | TWD579.00 |
| 2500 + | TWD54.60 | TWD546.00 |
* 參考價格
- RS庫存編號:
- 214-8988
- 製造零件編號:
- BSZ16DN25NS3GATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.9A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | OptiMOS 3 | |
| Package Type | TSDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 165mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 62.5W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 8.6nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Width | 6.35mm | |
| Standards/Approvals | No | |
| Length | 5.49mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.9A | ||
Maximum Drain Source Voltage Vds 250V | ||
Series OptiMOS 3 | ||
Package Type TSDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 165mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 62.5W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 8.6nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Width 6.35mm | ||
Standards/Approvals No | ||
Length 5.49mm | ||
Automotive Standard No | ||
The Infineon 250V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. With Lowest board space consumption, these allows system cost improvement. They deliver best-in-class performance to bring more efficiency, power density and Environmental friendly characteristics.
It has 150 °C operating temperature
Qualified according to JEDEC for target applications
相關連結
- Infineon OptiMOS 3 N-Channel MOSFET 250 V Enhancement, 8-Pin TSDSON BSZ16DN25NS3GATMA1
- Infineon OptiMOS N-Channel MOSFET 25 V Enhancement, 8-Pin TSDSON BSZ060NE2LSATMA1
- Infineon OptiMOS N-Channel MOSFET 25 V Enhancement, 8-Pin TSDSON BSC009NE2LSATMA1
- Infineon OptiMOS N-Channel MOSFET 30 V Enhancement, 8-Pin TSDSON BSZ0904NSIATMA1
- Infineon OptiMOS N-Channel MOSFET 40 V Enhancement, 8-Pin TSDSON BSZ025N04LSATMA1
- Infineon OptiMOS 3 N-Channel MOSFET 40 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS 3 N-Channel MOSFET 60 V Enhancement, 8-Pin TSDSON BSZ110N06NS3GATMA1
- Infineon OptiMOS 3 N-Channel MOSFET 30 V Enhancement, 8-Pin TSDSON BSZ050N03LSGATMA1