Infineon HEXFET Type N-Channel MOSFET, 170 A, 75 V, 3-Pin TO-263
- RS庫存編號:
- 214-4446P
- 製造零件編號:
- IRF2907ZSTRLPBF
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計 200 件 (以卷裝提供)*
TWD28,640.00
(不含稅)
TWD30,072.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 3,155 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 200 - 395 | TWD143.20 |
| 400 + | TWD141.40 |
* 參考價格
- RS庫存編號:
- 214-4446P
- 製造零件編號:
- IRF2907ZSTRLPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 170A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 300W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 270nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 170A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 300W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 270nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. It has fast switching speed and improved repetitive avalanche rating.
It is Lead-free
It is capable of being wave soldered