製造零件編號

Infineon OptiMOS Type N-Channel MOSFET, 180 A, 100 V N, 7-Pin TO-263

RS庫存編號:: 214-4363
製造零件編號:: IPB017N10N5LFATMA1
製造商:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 180 A, 100 V N, 7-Pin TO-263

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 1000 件）*

TWD111,100.00

(不含稅)

TWD116,660.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

1,000 件準備從其他地點送貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
1000 - 4000	TWD111.10	TWD111,100.00
5000 +	TWD108.90	TWD108,900.00

* 參考價格

RS庫存編號:: 214-4363
製造零件編號:: IPB017N10N5LFATMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	180A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-263
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	1.7mΩ
	Channel Mode	N
	Typical Gate Charge Qg @ Vgs	195nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	313W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	4.57mm
	Width	9.45 mm
	Length	10.31mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 180A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-263
	Series OptiMOS
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 1.7mΩ
	Channel Mode N
	Typical Gate Charge Qg @ Vgs 195nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 313W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 4.57mm
	Width 9.45 mm
	Length 10.31mm
	Automotive Standard No

IPB017N10N5LFATMA1 Datasheet

Combining a low RDS(on) with a wide safe operating area (SOA)

OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.

Summary of Features

•Combination of low R DS(on) and wide safe operating area (SOA)

•High max. pulse current

•High continuous pulse current

Benefits

•Rugged linear mode operation

•Low conduction losses

•Higher in-rush current enabled for faster start-up and shorter down time

Potential Applications

•Telecom

•Battery management