DiodesZetex DMN31D5UFO Type N-Channel MOSFET, 410 mA, 30 V Enhancement, 3-Pin X2-DFN DMN31D5UFO-7B
- RS庫存編號:
- 213-9189
- 製造零件編號:
- DMN31D5UFO-7B
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 200 件）*
TWD560.00
(不含稅)
TWD588.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 9,600 件從 2026年1月12日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 200 - 2400 | TWD2.80 | TWD560.00 |
| 2600 - 4800 | TWD2.70 | TWD540.00 |
| 5000 + | TWD2.70 | TWD540.00 |
* 參考價格
- RS庫存編號:
- 213-9189
- 製造零件編號:
- DMN31D5UFO-7B
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 410mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | X2-DFN | |
| Series | DMN31D5UFO | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.38nC | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.38W | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 0.65mm | |
| Width | 0.45 mm | |
| Height | 0.4mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 410mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type X2-DFN | ||
Series DMN31D5UFO | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.38nC | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.38W | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 0.65mm | ||
Width 0.45 mm | ||
Height 0.4mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex DMN31D5UFO series is N-channel MOSFET. It is used in general purpose interfacing switch, power management functions and analogue switch.
ESD protected gate
Low package profile
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