onsemi SUPERFET III Type N-Channel MOSFET & Diode, 13 A, 800 V Enhancement, 3-Pin TO-220 NTP360N80S3Z
- RS庫存編號:
- 205-2504
- 製造零件編號:
- NTP360N80S3Z
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD556.00
(不含稅)
TWD583.80
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 720 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 195 | TWD111.20 | TWD556.00 |
| 200 - 395 | TWD108.40 | TWD542.00 |
| 400 + | TWD106.60 | TWD533.00 |
* 參考價格
- RS庫存編號:
- 205-2504
- 製造零件編號:
- NTP360N80S3Z
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220 | |
| Series | SUPERFET III | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 25.3nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 96W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 30.7mm | |
| Width | 9.65 mm | |
| Height | 4.7mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220 | ||
Series SUPERFET III | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 25.3nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 96W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 30.7mm | ||
Width 9.65 mm | ||
Height 4.7mm | ||
Automotive Standard No | ||
The ON Semiconductor SUPERFET III series N-channel 800V MOSFET is optimized for primary switch of fly back converter, enables lower switching losses and case temperature without sacrificing EMI performance thanks to its optimized design. In addition, internal zener diode significantly improves ESD capability. This new family enables make more efficient, compact, cooler and more robust applications because of its remarkable performance in switching power applications such as Laptop adapter, Audio, Lighting, ATX power and industrial power supplies.
Continuous Drain Current rating is 13A
Drain to source on resistance rating is 360mohm
Ultra low gate charge
Low stored energy in output capacitance
100% avalanche tested
Package type is TO-220
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