onsemi NBTLS Type N-Channel MOSFET, 187 A, 150 V Enhancement, 8-Pin MO-299A
- RS庫存編號:
- 205-2451
- 製造零件編號:
- NTBLS4D0N15MC
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 2000 件）*
TWD238,400.00
(不含稅)
TWD250,320.00
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每卷* |
|---|---|---|
| 2000 - 2000 | TWD119.20 | TWD238,400.00 |
| 4000 + | TWD116.80 | TWD233,600.00 |
* 參考價格
- RS庫存編號:
- 205-2451
- 製造零件編號:
- NTBLS4D0N15MC
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 187A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | MO-299A | |
| Series | NBTLS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 90.4nC | |
| Maximum Power Dissipation Pd | 316W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 11.58mm | |
| Height | 2.2mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 187A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type MO-299A | ||
Series NBTLS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 90.4nC | ||
Maximum Power Dissipation Pd 316W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 11.58mm | ||
Height 2.2mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ON Semiconductor single N-Channel MOSFET has a drain to source voltage rating of 150V and a continuous drain current rating of 187A. This devices is Pb-Free, Halogen Free/BFR Free and are RoHS compliant.
Drain to source on resistance is 4.4mohm
Low RDS(on) to minimize conduction losses
Low QG and capacitance to minimize driver losses
Lowers Switching Noise/EMI
相關連結
- onsemi NBTLS Type N-Channel MOSFET 150 V Enhancement, 8-Pin MO-299A NTBLS4D0N15MC
- onsemi NBTLS Type N-Channel MOSFET 80 V N, 8-Pin M0-299A
- onsemi NBTLS Type N-Channel MOSFET 80 V N, 8-Pin M0-299A NTBLS1D7N08H
- Infineon iPB Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Infineon iPB Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 IPB018N06NF2SATMA1
- onsemi NCV51705 MOSFET Enhancement, 24-Pin QFN
- onsemi NCV51705 MOSFET Enhancement, 24-Pin QFN NCV51705MNTWG
- onsemi QFET Type P-Channel MOSFET 150 V Enhancement, 8-Pin MLP