Vishay SQD10950E Type N-Channel MOSFET, 11.5 A, 250 V Enhancement, 3-Pin TO-252
- RS庫存編號:
- 200-6793
- 製造零件編號:
- SQD10950E_GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 25 件）*
TWD852.50
(不含稅)
TWD895.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年9月08日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 475 | TWD34.10 | TWD852.50 |
| 500 - 975 | TWD33.20 | TWD830.00 |
| 1000 + | TWD32.80 | TWD820.00 |
* 參考價格
- RS庫存編號:
- 200-6793
- 製造零件編號:
- SQD10950E_GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11.5A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-252 | |
| Series | SQD10950E | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 62W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Height | 10.41mm | |
| Width | 2.38 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11.5A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-252 | ||
Series SQD10950E | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 62W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Height 10.41mm | ||
Width 2.38 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay SQD10950E_GE3 is a automotive N-channel 250V (D-S) 175°C MOSFET.
TrenchFET power MOSFET
Package with low thermal resistance
100 % Rg and UIS tested
AEC-Q101 qualified
相關連結
- Vishay SQD10950E Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-252 SQD10950E_GE3
- onsemi PowerTrench Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- onsemi PowerTrench Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 FDD5353
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementRVQ(S
- ROHM R6003KND3 Type N-Channel MOSFET Enhancement, 3-Pin TO-252 R6003KND3TL1
- ROHM RD3P050SN Type N-Channel MOSFET Enhancement, 3-Pin TO-252 RD3P050SNTL1
- DiodesZetex Type N-Channel MOSFET 12 V Enhancement TO-252