製造零件編號

STMicroelectronics Type N-Channel MOSFET, 15 A, 600 V Enhancement, 5-Pin PowerFLAT

RS庫存編號:: 192-4658
製造零件編號:: STL26N60DM6
製造商:: STMicroelectronics

STMicroelectronics Type N-Channel MOSFET, 15 A, 600 V Enhancement, 5-Pin PowerFLAT

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 3000 件）*

TWD248,700.00

(不含稅)

TWD261,120.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2027年1月04日發貨

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單位	每單位	每卷*
3000 - 12000	TWD82.90	TWD248,700.00
15000 +	TWD80.40	TWD241,200.00

* 參考價格

RS庫存編號:: 192-4658
製造零件編號:: STL26N60DM6
製造商:: STMicroelectronics

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	STMicroelectronics
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	15A
	Maximum Drain Source Voltage Vds	600V
	Package Type	PowerFLAT
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	215mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	24nC
	Maximum Power Dissipation Pd	110W
	Maximum Gate Source Voltage Vgs	25 V
	Forward Voltage Vf	1.6V
	Maximum Operating Temperature	150°C
	Width	8.1 mm
	Length	8.1mm
	Height	0.9mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 STMicroelectronics
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 15A
	Maximum Drain Source Voltage Vds 600V
	Package Type PowerFLAT
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 215mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 24nC
	Maximum Power Dissipation Pd 110W
	Maximum Gate Source Voltage Vgs 25 V
	Forward Voltage Vf 1.6V
	Maximum Operating Temperature 150°C
	Width 8.1 mm
	Length 8.1mm
	Height 0.9mm
	Standards/Approvals No
	Automotive Standard No

COO (Country of Origin):: CN

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Lower RDS(on) per area vs previous generation

Low gate charge, input capacitance and resistance

Extremely high dv/dt ruggedness

Zener-protected

STMicroelectronics Type N-Channel MOSFET, 15 A, 600 V Enhancement, 5-Pin PowerFLAT

訂單超過 $1,300.00 免費送貨

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