STMicroelectronics Type N-Channel MOSFET, 9 A, 950 V Enhancement, 3-Pin TO-220
- RS庫存編號:
- 188-8295
- 製造零件編號:
- STP6N95K5
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 50 件）*
TWD2,490.00
(不含稅)
TWD2,614.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 900 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD49.80 | TWD2,490.00 |
| 100 - 150 | TWD48.80 | TWD2,440.00 |
| 200 + | TWD47.80 | TWD2,390.00 |
* 參考價格
- RS庫存編號:
- 188-8295
- 製造零件編號:
- STP6N95K5
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.25Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Power Dissipation Pd | 90W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Height | 15.75mm | |
| Width | 4.6 mm | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 950V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.25Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Power Dissipation Pd 90W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Height 15.75mm | ||
Width 4.6 mm | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Automotive Standard No | ||
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications Product status link requiring superior power density and high efficiency.
Ultra low gate charge
Zener-protected
Applications
Switching applications
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