Vishay SUP60020E Type N-Channel MOSFET, 150 A, 80 V Enhancement, 3-Pin TO-220
- RS庫存編號:
- 188-4929
- 製造零件編號:
- SUP60020E-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 50 件）*
TWD3,165.00
(不含稅)
TWD3,323.00
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 1,100 個，準備發貨
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD63.30 | TWD3,165.00 |
| 100 - 150 | TWD62.00 | TWD3,100.00 |
| 200 + | TWD60.70 | TWD3,035.00 |
* 參考價格
- RS庫存編號:
- 188-4929
- 製造零件編號:
- SUP60020E-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-220 | |
| Series | SUP60020E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 151.2nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 9.01mm | |
| Width | 4.65 mm | |
| Length | 10.51mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-220 | ||
Series SUP60020E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 151.2nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 9.01mm | ||
Width 4.65 mm | ||
Length 10.51mm | ||
Automotive Standard No | ||
N-Channel 80 V (D-S) MOSFET.
TrenchFET® power MOSFET
Maximum 175 °C junction temperature
Very low Qgd reduces power loss from passing through Vplateau
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