製造零件編號

ROHM N-Channel MOSFET, 30 A, 600 V, 3-Pin TO-247G R6030JNZ4C13

RS庫存編號:: 185-1315
製造零件編號:: R6030JNZ4C13
製造商:: ROHM

ROHM N-Channel MOSFET, 30 A, 600 V, 3-Pin TO-247G R6030JNZ4C13

可享批量折扣

小計（1 件）*

TWD202.00

(不含稅)

TWD212.10

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 2 個，準備發貨

單位	每單位
1 - 9	TWD202.00
10 - 19	TWD198.00
20 +	TWD192.00

* 參考價格

RS庫存編號:: 185-1315
製造零件編號:: R6030JNZ4C13
製造商:: ROHM

規格

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選取全部	屬性	值
	品牌	ROHM
	Channel Type	N
	Maximum Continuous Drain Current	30 A
	Maximum Drain Source Voltage	600 V
	Package Type	TO-247G
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	140 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	7V
	Minimum Gate Threshold Voltage	5V
	Maximum Power Dissipation	370 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	±30 V
	Width	5.22mm
	Typical Gate Charge @ Vgs	74 nC @ 15 V
	Maximum Operating Temperature	+150 °C
	Length	16.24mm
	Number of Elements per Chip	1
	Minimum Operating Temperature	-55 °C
	Height	21.25mm

	選取全部
	品牌 ROHM
	Channel Type N
	Maximum Continuous Drain Current 30 A
	Maximum Drain Source Voltage 600 V
	Package Type TO-247G
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 140 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 7V
	Minimum Gate Threshold Voltage 5V
	Maximum Power Dissipation 370 W
	Transistor Configuration Single
	Maximum Gate Source Voltage ±30 V
	Width 5.22mm
	Typical Gate Charge @ Vgs 74 nC @ 15 V
	Maximum Operating Temperature +150 °C
	Length 16.24mm
	Number of Elements per Chip 1
	Minimum Operating Temperature -55 °C
	Height 21.25mm

Datasheet R6030JNZ4C13

COO (Country of Origin):: TH

R6030JNZ4 is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.

Fast reverse recovery time (trr)
Low on-resistance
Fast switching speed
Drive circuits can be simple
Pb-free plating

ROHM N-Channel MOSFET, 30 A, 600 V, 3-Pin TO-247G R6030JNZ4C13

訂單超過 $1,300.00 免費送貨

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