onsemi NTE Type N-Channel MOSFET, 915 mA, 20 V Enhancement, 3-Pin SC-89 NTE4153NT1G
- RS庫存編號:
- 184-1203
- 製造零件編號:
- NTE4153NT1G
- 製造商:
- onsemi
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 100 件)*
TWD320.00
(不含稅)
TWD336.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 5,300 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 100 - 700 | TWD3.20 | TWD320.00 |
| 800 - 1400 | TWD3.10 | TWD310.00 |
| 1500 + | TWD3.10 | TWD310.00 |
* 參考價格
- RS庫存編號:
- 184-1203
- 製造零件編號:
- NTE4153NT1G
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 915mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-89 | |
| Series | NTE | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 950mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 300mW | |
| Maximum Gate Source Voltage Vgs | 6 V | |
| Typical Gate Charge Qg @ Vgs | 1.82nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.8mm | |
| Standards/Approvals | No | |
| Width | 0.95 mm | |
| Length | 1.7mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 915mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-89 | ||
Series NTE | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 950mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 300mW | ||
Maximum Gate Source Voltage Vgs 6 V | ||
Typical Gate Charge Qg @ Vgs 1.82nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.8mm | ||
Standards/Approvals No | ||
Width 0.95 mm | ||
Length 1.7mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Small Signal MOSFET 20V 915mA 230 mOhm Single N-Channel SC-89 with ESD Protection
Low RDS(on) Improving System Efficiency
Low Threshold Voltage, 1.5V Rated
ESD Protected Gate
Applications:
Load/Power Switches
Power Supply Converter Circuits
Battery Management
Portables like Cell Phones, PDAs, Digital Cameras, Pagers, etc.
相關連結
- onsemi NTE Type N-Channel MOSFET 20 V Enhancement, 3-Pin SC-89
- onsemi NTA Type N-Channel MOSFET 20 V Enhancement, 3-Pin SC-75
- onsemi NTA Type N-Channel MOSFET 20 V Enhancement, 3-Pin SC-75 NTA4153NT1G
- onsemi Type P-Channel MOSFET 20 V Enhancement, 3-Pin SC-89
- onsemi 2N7002T Type N-Channel MOSFET 60 V Enhancement, 3-Pin SC-89
- onsemi Type P-Channel MOSFET 20 V Enhancement, 3-Pin SC-89 NTE4151PT1G
- onsemi 2N7002T Type N-Channel MOSFET 60 V Enhancement, 3-Pin SC-89 2N7002T
- onsemi Isolated PowerTrench 2 Type P-Channel MOSFET 20 V Enhancement, 6-Pin SC-89
