- RS庫存編號:
- 184-1064
- 製造零件編號:
- NTJD4401NT1G
- 製造商:
- onsemi
3000 現貨庫存,可於6工作日發貨。
已增加
單價(不含稅) 個 (在毎卷:3000)
TWD3.00
(不含稅)
TWD3.15
(含稅)
單位 | Per unit | Per Reel* |
3000 - 3000 | TWD3.00 | TWD9,000.00 |
6000 - 9000 | TWD2.90 | TWD8,700.00 |
12000 + | TWD2.80 | TWD8,400.00 |
* 參考價格 |
- RS庫存編號:
- 184-1064
- 製造零件編號:
- NTJD4401NT1G
- 製造商:
- onsemi
產品概覽和技術數據資料表
法例與合規
- COO (Country of Origin):
- CN
產品詳細資訊
This N-Channel dual device was designed with a small footprint package (2x2 mm) with ON Semiconductor's leading planar process for small footprint and increased efficiency. The low figure of merit is particularly suited for single or dual cell Li-Ion battery supplied devices such as cell phones, media players, digital cameras, and PDAs.
Small Footprint (2 x 2 mm)
Low Gate Charge N-Channel Device
ESD Protected Gate
Same Package as SC-70 (6 Leads)
Applications:
Load Power Switching
Li-Ion Battery Supplied Devices
DC-DC Conversion
Low Gate Charge N-Channel Device
ESD Protected Gate
Same Package as SC-70 (6 Leads)
Applications:
Load Power Switching
Li-Ion Battery Supplied Devices
DC-DC Conversion
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
規格
屬性 | 值 |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 910 mA |
Maximum Drain Source Voltage | 20 V |
Package Type | SC-88 |
Mounting Type | Surface Mount |
Pin Count | 6 |
Maximum Drain Source Resistance | 440 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 1.5V |
Minimum Gate Threshold Voltage | 0.6V |
Maximum Power Dissipation | 550 mW |
Maximum Gate Source Voltage | ±12 V |
Number of Elements per Chip | 2 |
Width | 1.35mm |
Typical Gate Charge @ Vgs | 1.3 nC @ 4.5 V |
Length | 2.2mm |
Maximum Operating Temperature | +150 °C |
Automotive Standard | AEC-Q101 |
Minimum Operating Temperature | -55 °C |
Height | 1mm |
Forward Diode Voltage | 1.1V |