DiodesZetex DMT Type N-Channel MOSFET, 46.3 A, 100 V Enhancement, 4-Pin TO-252
- RS庫存編號:
- 182-6936
- 製造零件編號:
- DMTH10H025SK3-13
- 製造商:
- DiodesZetex
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 卷,共 2500 件)*
TWD29,500.00
(不含稅)
TWD30,975.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年2月10日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 2500 | TWD11.80 | TWD29,500.00 |
| 5000 + | TWD11.50 | TWD28,750.00 |
* 參考價格
- RS庫存編號:
- 182-6936
- 製造零件編號:
- DMTH10H025SK3-13
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 46.3A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | DMT | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 3.7W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 21.4nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.7mm | |
| Standards/Approvals | No | |
| Width | 6.2 mm | |
| Height | 2.26mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 46.3A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series DMT | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 3.7W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 21.4nC | ||
Maximum Operating Temperature 175°C | ||
Length 6.7mm | ||
Standards/Approvals No | ||
Width 6.2 mm | ||
Height 2.26mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.
100% Unclamped Inductive Switching – Ensures More Reliable
and Robust End Application
Low RDS(ON) – Minimizes Power Losses
Low QG – Minimizes Switching Losses
Lead-free finish
Halogen and Antimony Free. Green Device.
Applications
Power Management Functions
DC-DC Converters
Backlighting
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