Diodes Inc N-Channel MOSFET, 4 A, 100 V, 6-Pin U-DFN2020 DMT10H072LFDF-7

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RS 不再對此產品進貨。
RS庫存編號:
182-6928
製造零件編號:
DMT10H072LFDF-7
製造商:
DiodesZetex
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DiodesZetex

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

100 V

Package Type

U-DFN2020

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Length

2.05mm

Maximum Operating Temperature

+150 °C

Width

2.05mm

Typical Gate Charge @ Vgs

5.1 nC @ 10V

Number of Elements per Chip

1

Forward Diode Voltage

1V

Minimum Operating Temperature

-55 °C

Height

0.58mm

COO (Country of Origin):
CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

0.6mm Profile – Ideal for Low Profile Applications
PCB Footprint of 4mm2
Low On-Resistance
Applications
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.