DiodesZetex DMP Type P-Channel MOSFET, 4.7 A, 20 V Enhancement, 3-Pin X2-DFN
- RS庫存編號:
- 182-6912
- 製造零件編號:
- DMP2045UFY4-7
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
TWD9,600.00
(不含稅)
TWD10,080.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年8月28日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD3.20 | TWD9,600.00 |
| 6000 + | TWD3.10 | TWD9,300.00 |
* 參考價格
- RS庫存編號:
- 182-6912
- 製造零件編號:
- DMP2045UFY4-7
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.7A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMP | |
| Package Type | X2-DFN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 1.49W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 6.8nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.07mm | |
| Width | 1.57 mm | |
| Standards/Approvals | No | |
| Height | 0.35mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.7A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMP | ||
Package Type X2-DFN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 1.49W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 6.8nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 2.07mm | ||
Width 1.57 mm | ||
Standards/Approvals No | ||
Height 0.35mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected
Totally Lead-Free
Halogen and Antimony Free. “Green” Device.
Applications
Backlighting
Power Management Functions
DC-DC Converters
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