Vishay TrenchFET Type P-Channel MOSFET, 2.2 A, 80 V Enhancement, 3-Pin SOT-23 SQ2337ES-T1_GE3
- RS庫存編號:
- 180-8076
- 製造零件編號:
- SQ2337ES-T1_GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 20 件）*
TWD382.00
(不含稅)
TWD401.20
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 2,240 件從 2026年1月09日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 740 | TWD19.10 | TWD382.00 |
| 760 - 1480 | TWD18.60 | TWD372.00 |
| 1500 + | TWD18.40 | TWD368.00 |
* 參考價格
- RS庫存編號:
- 180-8076
- 製造零件編號:
- SQ2337ES-T1_GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.2A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | TrenchFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 314mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 11.5nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 3W | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.04mm | |
| Height | 1.12mm | |
| Standards/Approvals | No | |
| Width | 2.64 mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.2A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series TrenchFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 314mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 11.5nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 3W | ||
Maximum Operating Temperature 175°C | ||
Length 3.04mm | ||
Height 1.12mm | ||
Standards/Approvals No | ||
Width 2.64 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 80V and a maximum gate-source voltage of 20V. It has drain-source resistance of 290mohm at a gate-source voltage of 4.5V. It has a maximum power dissipation of 3W and continuous drain current of 2.2A. The minimum and a maximum driving voltage for this MOSFET is 6V and 10V respectively. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
Certifications
• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
相關連結
- Vishay TrenchFET Type P-Channel MOSFET 80 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel TrenchFET Power MOSFET 60 V Enhancement, 3-Pin SOT-23 SQ2309ES-T1_GE3
- Vishay TrenchFET Type P-Channel MOSFET 80 V Enhancement, 3-Pin SOT-23 SI2337DS-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23 SQ2389ES-T1_GE3
- Vishay TrenchFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 SQ2308CES-T1_GE3
- Vishay TrenchFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 SQ2362ES-T1_GE3
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23 SQ2318AES-T1_GE3
- Vishay TrenchFET Type P-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23