Vishay Single 1 Type N-Channel MOSFET, 60 A, 100 V, 8-Pin PowerPAK SO-8

RS庫存編號:: 180-7355
製造零件編號:: SIR882ADP-T1-GE3
製造商:: Vishay

Vishay Single 1 Type N-Channel MOSFET, 60 A, 100 V, 8-Pin PowerPAK SO-8

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可享批量折扣

小計（1 卷，共 3000 件）*

TWD114,000.00

(不含稅)

TWD119,700.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

3,000 件準備從其他地點送貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
3000 - 3000	TWD38.00	TWD114,000.00
6000 +	TWD36.80	TWD110,400.00

* 參考價格

RS庫存編號:: 180-7355
製造零件編號:: SIR882ADP-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	60A
	Maximum Drain Source Voltage Vds	100V
	Package Type	PowerPAK SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0087Ω
	Typical Gate Charge Qg @ Vgs	19.5nC
	Forward Voltage Vf	1.1V
	Maximum Power Dissipation Pd	83W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Transistor Configuration	Single
	Standards/Approvals	No
	Length	6.25mm
	Height	1.12mm
	Number of Elements per Chip	1
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 60A
	Maximum Drain Source Voltage Vds 100V
	Package Type PowerPAK SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0087Ω
	Typical Gate Charge Qg @ Vgs 19.5nC
	Forward Voltage Vf 1.1V
	Maximum Power Dissipation Pd 83W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Transistor Configuration Single
	Standards/Approvals No
	Length 6.25mm
	Height 1.12mm
	Number of Elements per Chip 1
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount N-channel PowerPAK-SO-8 MOSFET is a new age product with a drain-source voltage of 100V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 8.7mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 83W and continuous drain current of 60A. It has a minimum and a maximum driving voltage of 4.5V and 10V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free component

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET for fast switching

Applications

• DC/DC primary side switch

• Industrial sites

• Telecom/server 48V, full/half-bridge DC/DC

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested