Vishay IRFP Type P-Channel MOSFET, 21 A, 100 V Enhancement, 3-Pin TO-247 IRFP9140PBF
- RS庫存編號:
- 178-0781
- 製造零件編號:
- IRFP9140PBF
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 25 件）*
TWD1,830.00
(不含稅)
TWD1,921.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 225 件從 2026年1月05日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 25 - 100 | TWD73.20 | TWD1,830.00 |
| 125 + | TWD65.80 | TWD1,645.00 |
* 參考價格
- RS庫存編號:
- 178-0781
- 製造零件編號:
- IRFP9140PBF
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-247 | |
| Series | IRFP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 180W | |
| Forward Voltage Vf | -5V | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.87mm | |
| Standards/Approvals | No | |
| Height | 20.7mm | |
| Width | 5.31 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-247 | ||
Series IRFP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 180W | ||
Forward Voltage Vf -5V | ||
Maximum Operating Temperature 175°C | ||
Length 15.87mm | ||
Standards/Approvals No | ||
Height 20.7mm | ||
Width 5.31 mm | ||
Automotive Standard No | ||
The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Dynamic dV/dt rating
Repetitive avalanche rated
Fast switching
Ease of paralleling
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