Microchip 2N6661 Type N-Channel MOSFET, 350 mA, 90 V Enhancement, 3-Pin TO-39 2N6661

RS庫存編號:: 177-9750
製造零件編號:: 2N6661
製造商:: Microchip

Microchip 2N6661 Type N-Channel MOSFET, 350 mA, 90 V Enhancement, 3-Pin TO-39 2N6661

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 件）*

TWD569.00

(不含稅)

TWD597.45

訂單超過 $1,300.00 免費送貨

有庫存

5 件準備從其他地點送貨
加上 198 件從 2026年5月07日起發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位
1 +	TWD569.00

* 參考價格

RS庫存編號:: 177-9750
製造零件編號:: 2N6661
製造商:: Microchip

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Microchip
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	350mA
	Maximum Drain Source Voltage Vds	90V
	Package Type	TO-39
	Series	2N6661
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	5Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	6.25W
	Forward Voltage Vf	0.9V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	6.6mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Microchip
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 350mA
	Maximum Drain Source Voltage Vds 90V
	Package Type TO-39
	Series 2N6661
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 5Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 6.25W
	Forward Voltage Vf 0.9V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 6.6mm
	Standards/Approvals No
	Automotive Standard No

Datasheet

Microchip Technology MOSFET

The Microchip Technology through-hole mount N-channel MOSFET is a new age product with a drain-source voltage of 90V and a maximum gate-source voltage of 20V. It has drain-source resistance of 4ohms at a gate-source voltage of 10V. It has continuous drain current of 350mA and maximum power dissipation of 6.25W. The minimum and a maximum driving voltage for this MOSFET is 5V and 10V respectively. The MOSFET is an enhancement mode (normally off) MOSFET that utilizes a vertical DMOS structure and well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. A significant characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. This vertical DMOS FET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Ease of paralleling

• Excellent thermal stability

• Free from secondary breakdown

• High input impedance and high gain

• Integral source drain diode

• Low CISS and fast switching speeds

• Low power drive requirement

• Operating temperature ranges between -55°C and 150°C

Applications

• Amplifiers

• Converters

• Drivers: relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.

• Motor controls

• Power supply circuits

• Switches

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007