Microchip TN2540 Type N-Channel MOSFET, 260 mA, 400 V Enhancement, 3-Pin TO-243
- RS庫存編號:
- 177-9693
- 製造零件編號:
- TN2540N8-G
- 製造商:
- Microchip
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可享批量折扣
小計(1 卷,共 2000 件)*
TWD76,400.00
(不含稅)
TWD80,220.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年2月25日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2000 - 8000 | TWD38.20 | TWD76,400.00 |
| 10000 + | TWD34.40 | TWD68,800.00 |
* 參考價格
- RS庫存編號:
- 177-9693
- 製造零件編號:
- TN2540N8-G
- 製造商:
- Microchip
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 260mA | |
| Maximum Drain Source Voltage Vds | 400V | |
| Series | TN2540 | |
| Package Type | TO-243 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.6 mm | |
| Standards/Approvals | No | |
| Length | 4.6mm | |
| Height | 1.6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 260mA | ||
Maximum Drain Source Voltage Vds 400V | ||
Series TN2540 | ||
Package Type TO-243 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 150°C | ||
Width 2.6 mm | ||
Standards/Approvals No | ||
Length 4.6mm | ||
Height 1.6mm | ||
Automotive Standard No | ||
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Low threshold (2.0V max.)
High input impedance
Low input capacitance (125pF max.)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
相關連結
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