onsemi Dual NVMFD5C680NL 2 Type N-Channel MOSFET, 26 A, 60 V Enhancement, 8-Pin DFN NVMFD5C680NLT1G
- RS庫存編號:
- 172-3375
- 製造零件編號:
- NVMFD5C680NLT1G
- 製造商:
- onsemi
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 25 件)*
TWD912.50
(不含稅)
TWD958.00
(含稅)
添加 50 件 件可免費送貨
有庫存
- 1,500 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 350 | TWD36.50 | TWD912.50 |
| 375 - 725 | TWD35.60 | TWD890.00 |
| 750 + | TWD35.10 | TWD877.50 |
* 參考價格
- RS庫存編號:
- 172-3375
- 製造零件編號:
- NVMFD5C680NLT1G
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DFN | |
| Series | NVMFD5C680NL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 19W | |
| Typical Gate Charge Qg @ Vgs | 5nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | No | |
| Height | 1.05mm | |
| Width | 5.1 mm | |
| Length | 6.1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DFN | ||
Series NVMFD5C680NL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 19W | ||
Typical Gate Charge Qg @ Vgs 5nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Standards/Approvals No | ||
Height 1.05mm | ||
Width 5.1 mm | ||
Length 6.1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm)
Compact Design
Low rDS(on)
Minimize Conduction Loss
Low QG and Capacitance
Minimize Driver Losses
NVMFD5C446NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Applications
Solenoid driver
Low side / high side driver
Automotive engine controllers
Antilock braking systems
相關連結
- onsemi Dual NVMFD5C680NL 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin DFN
- onsemi Dual NVMFD5C680NL 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin DFN NVMFD5C680NLWFT1G
- onsemi Dual 2 Type N-Channel Power MOSFET 60 V Enhancement, 8-Pin DFN
- onsemi Dual 2 Type N-Channel Power MOSFET 40 V Enhancement, 8-Pin DFN
- onsemi Dual 2 Type N-Channel Power MOSFET 60 V Enhancement, 8-Pin DFN
- onsemi Dual NVMFD5C650NL 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin DFN
- onsemi Dual NVMFD5C466NL 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin DFN
- onsemi Dual NVMFD5C462NL 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin DFN
