onsemi NVD5C464N Type N-Channel MOSFET, 59 A, 40 V Enhancement, 4-Pin TO-252 NVD5C464NT4G
- RS庫存編號:
- 172-3367
- 製造零件編號:
- NVD5C464NT4G
- 製造商:
- onsemi
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可享批量折扣
查看批量定價選項小計（1 包，共 25 件）*
TWD1,110.00
(不含稅)
TWD1,165.50
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年11月23日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 600 | TWD44.40 | TWD1,110.00 |
| 625 - 1225 | TWD43.30 | TWD1,082.50 |
| 1250 + | TWD42.60 | TWD1,065.00 |
* 參考價格
- RS庫存編號:
- 172-3367
- 製造零件編號:
- NVD5C464NT4G
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 59A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | NVD5C464N | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 5.8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 40W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Height | 2.25mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 59A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series NVD5C464N | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 5.8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 40W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Height 2.25mm | ||
Automotive Standard AEC-Q101 | ||
SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency.
700 V @ TJ = 150 oC
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 259 nC)
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 1972 pF)
Lower switching loss
Excellent body diode performance (low Qrr, robust body diode)
Higher system reliability in LLC and Phase shift full bridge circuit
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
Typ. RDS(on) = 23 mΩ
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