onsemi NVD5C464N Type N-Channel MOSFET, 59 A, 40 V Enhancement, 4-Pin TO-252 NVD5C464NT4G

RS庫存編號:: 172-3367
製造零件編號:: NVD5C464NT4G
製造商:: onsemi

onsemi NVD5C464N Type N-Channel MOSFET, 59 A, 40 V Enhancement, 4-Pin TO-252 NVD5C464NT4G

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小計（1 包，共 25 件）*

TWD990.00

(不含稅)

TWD1,039.50

訂單超過 $1,300.00 免費送貨

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從 2026年8月12日發貨

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單位	每單位	每包*
25 - 600	TWD39.60	TWD990.00
625 - 1225	TWD38.60	TWD965.00
1250 +	TWD38.00	TWD950.00

* 參考價格

RS庫存編號:: 172-3367
製造零件編號:: NVD5C464NT4G
製造商:: onsemi

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	59A
	Maximum Drain Source Voltage Vds	40V
	Series	NVD5C464N
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	5.8mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	40W
	Typical Gate Charge Qg @ Vgs	20nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	175°C
	Width	6.22 mm
	Height	2.25mm
	Standards/Approvals	No
	Length	6.73mm
	Automotive Standard	AEC-Q101

	選取全部
	品牌 onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 59A
	Maximum Drain Source Voltage Vds 40V
	Series NVD5C464N
	Package Type TO-252
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 5.8mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 40W
	Typical Gate Charge Qg @ Vgs 20nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 175°C
	Width 6.22 mm
	Height 2.25mm
	Standards/Approvals No
	Length 6.73mm
	Automotive Standard AEC-Q101

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency.

700 V @ TJ = 150 oC

Higher system reliability at low temperature operation

Ultra Low Gate Charge (Typ. Qg = 259 nC)

Lower switching loss

Low Effective Output Capacitance (Typ. Coss(eff.) = 1972 pF)

Lower switching loss

Excellent body diode performance (low Qrr, robust body diode)

Higher system reliability in LLC and Phase shift full bridge circuit

Optimized Capacitance

Lower peak Vds and lower Vgs oscillation

Typ. RDS(on) = 23 mΩ

onsemi NVD5C464N Type N-Channel MOSFET, 59 A, 40 V Enhancement, 4-Pin TO-252 NVD5C464NT4G

訂單超過 $1,300.00 免費送貨

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