Taiwan Semi N-Channel MOSFET, 3 A, 60 V, 3-Pin SOT-23 TSM2308CX RFG
- RS庫存編號:
- 171-3615
- 製造零件編號:
- TSM2308CX RFG
- 製造商:
- Taiwan Semiconductor
暫時無法供應
抱歉,我們不知道何時會到貨。
- RS庫存編號:
- 171-3615
- 製造零件編號:
- TSM2308CX RFG
- 製造商:
- Taiwan Semiconductor
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Taiwan Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 192 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 1.25 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Typical Gate Charge @ Vgs | 3.99 nC @ 4.5 V | |
| Length | 3mm | |
| Width | 1.4mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.05mm | |
| Forward Diode Voltage | 1.2V | |
| 選取全部 | ||
|---|---|---|
品牌 Taiwan Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 3 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 192 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 1.25 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Typical Gate Charge @ Vgs 3.99 nC @ 4.5 V | ||
Length 3mm | ||
Width 1.4mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 1.05mm | ||
Forward Diode Voltage 1.2V | ||
The Taiwan Semiconductor 60V, 3A, 3 pin, N-channel MOSFET has single transistor configuration and enhancement channel mode. It is generally used DC-DC power system
and load switch applications.
and load switch applications.
Advance trench process technology
High density cell design for ultra low on-resistance
Operating temperature ranges between -55 °C to +150 °C
1.25W max. power dissipation
Gate threshold voltage ranges between 1.2V-2.5V
High density cell design for ultra low on-resistance
Operating temperature ranges between -55 °C to +150 °C
1.25W max. power dissipation
Gate threshold voltage ranges between 1.2V-2.5V
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
相關連結
- Taiwan Semiconductor Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 TSM2307CX RFG
- Taiwan Semiconductor Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Taiwan Semiconductor TS9011SCX RFG, Voltage Regulator 0.3 W 12V SOT-23 3-Pin
- Taiwan Semiconductor BC817-40 RFG Transistor 45 V, 3-Pin SOT-23
- Taiwan Semiconductor, Voltage Regulator 0.3 W 12V SOT-23 3-Pin
- Taiwan Semiconductor Transistor 400 V, 3-Pin SOT-23
- Taiwan Semiconductor Surface Hall Effect Sensor 2.5 V 24 V 3-Pin
- Taiwan Semiconductor TS5205CX533 RFG, Voltage Regulator 16V SOT-25 5-Pin
