Infineon Si4435DYPbF Type P-Channel MOSFET, 8 A, 30 V Enhancement, 8-Pin SO-8
- RS庫存編號:
- 170-2264
- 製造零件編號:
- SI4435DYTRPBF
- 製造商:
- Infineon
可享批量折扣
小計（1 卷，共 4000 件）*
TWD38,400.00
(不含稅)
TWD40,320.00
(含稅)
添加 4000 件 件可免費送貨
最後的 RS 庫存
- 最終 4,000 個，準備發貨
單位 | 每單位 | 每卷* |
|---|---|---|
| 4000 - 4000 | TWD9.60 | TWD38,400.00 |
| 8000 - 12000 | TWD9.30 | TWD37,200.00 |
| 16000 + | TWD9.00 | TWD36,000.00 |
* 參考價格
- RS庫存編號:
- 170-2264
- 製造零件編號:
- SI4435DYTRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | Si4435DYPbF | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Width | 4 mm | |
| Height | 1.5mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series Si4435DYPbF | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Standards/Approvals No | ||
Width 4 mm | ||
Height 1.5mm | ||
Automotive Standard No | ||
不相容
The Infineon SI4435DY is the 30V single P-channel HEXFET power MOSFET in a SO-8 package. These P-channel HEXFET power MOSFETs from International Rectifier utilize Advanced processing techniques to achieve the extremely low on-resistance per silicon area.
P-channel MOSFET
Surface mount
Available in tape and reel
Lead free
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