Infineon BSR316P Type P-Channel MOSFET, 360 mA, 100 V Enhancement, 3-Pin SC-59
- RS庫存編號:
- 170-2250
- 製造零件編號:
- BSR316PH6327XTSA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 卷,共 3000 件)*
TWD15,000.00
(不含稅)
TWD15,750.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 27,000 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD5.00 | TWD15,000.00 |
| 15000 + | TWD4.80 | TWD14,400.00 |
* 參考價格
- RS庫存編號:
- 170-2250
- 製造零件編號:
- BSR316PH6327XTSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 360mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SC-59 | |
| Series | BSR316P | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.2Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5.3nC | |
| Forward Voltage Vf | -0.8V | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Width | 1.6 mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 360mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SC-59 | ||
Series BSR316P | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.2Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5.3nC | ||
Forward Voltage Vf -0.8V | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Length 3mm | ||
Standards/Approvals No | ||
Width 1.6 mm | ||
Automotive Standard AEC-Q101 | ||
All products in small signal packages are suitable for automotive applications
Infineons highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics
Enhancement mode
Pb-free lead plating
Target Applications:
Automotive
Consumer
DC-DC
eMobility
Motor control
Notebook
Onboard charger
相關連結
- Infineon BSR316P Type P-Channel MOSFET 100 V Enhancement, 3-Pin SC-59 BSR316PH6327XTSA1
- Infineon BSR92P Type P-Channel MOSFET 250 V Enhancement, 3-Pin SC-59
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SC-59
- Infineon BSR92P Type P-Channel MOSFET 250 V Enhancement, 3-Pin SC-59 BSR92PH6327XTSA1
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SC-59 BSR315PH6327XTSA1
- DiodesZetex DMP Type P-Channel MOSFET 30 V Enhancement, 3-Pin SC-59
- DiodesZetex DMP Type P-Channel MOSFET 20 V Enhancement, 3-Pin SC-59
- Infineon BSR202N Type N-Channel MOSFET 20 V Enhancement, 3-Pin PG-SC-59
