Infineon HEXFET Type N-Channel MOSFET, 129 A, 135 V Enhancement, 3-Pin TO-263
- RS庫存編號:
- 168-5948
- 製造零件編號:
- IRF135S203
- 製造商:
- Infineon
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可享批量折扣
小計（1 卷，共 800 件）*
TWD43,120.00
(不含稅)
TWD45,280.00
(含稅)
添加 800 件 件可免費送貨
暫時缺貨
- 從 2026年5月25日 發貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 800 - 3200 | TWD53.90 | TWD43,120.00 |
| 4000 + | TWD52.30 | TWD41,840.00 |
* 參考價格
- RS庫存編號:
- 168-5948
- 製造零件編號:
- IRF135S203
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 129A | |
| Maximum Drain Source Voltage Vds | 135V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 441W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.83 mm | |
| Height | 9.65mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 129A | ||
Maximum Drain Source Voltage Vds 135V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 441W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Maximum Operating Temperature 175°C | ||
Width 4.83 mm | ||
Height 9.65mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
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