IXYS X2-Class Type N-Channel MOSFET, 76 A, 650 V Enhancement, 4-Pin SOT-227
- RS庫存編號:
- 168-4820
- 製造零件編號:
- IXTN102N65X2
- 製造商:
- IXYS
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 10 件）*
TWD10,286.00
(不含稅)
TWD10,800.30
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 50 件準備從其他地點送貨
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單位 | 每單位 | 每管* |
|---|---|---|
| 10 - 40 | TWD1,028.60 | TWD10,286.00 |
| 50 + | TWD1,008.10 | TWD10,081.00 |
* 參考價格
- RS庫存編號:
- 168-4820
- 製造零件編號:
- IXTN102N65X2
- 製造商:
- IXYS
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 76A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | SOT-227 | |
| Series | X2-Class | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 152nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 595W | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Width | 25.42 mm | |
| Standards/Approvals | No | |
| Height | 9.6mm | |
| Length | 38.23mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 76A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type SOT-227 | ||
Series X2-Class | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 152nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 595W | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Width 25.42 mm | ||
Standards/Approvals No | ||
Height 9.6mm | ||
Length 38.23mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
N-channel Power MOSFET, IXYS X2-Class Series
The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
相關連結
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