onsemi PowerTrench Type N-Channel MOSFET, 120 A, 75 V Enhancement, 3-Pin TO-263
- RS庫存編號:
- 166-2550
- 製造零件編號:
- FDB088N08
- 製造商:
- onsemi
不可供應
RS 不再對此產品進貨。
- RS庫存編號:
- 166-2550
- 製造零件編號:
- FDB088N08
- 製造商:
- onsemi
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-263 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 160W | |
| Forward Voltage Vf | 1.25V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 91nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Width | 11.33 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-263 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 160W | ||
Forward Voltage Vf 1.25V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 91nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 4.83mm | ||
Length 10.67mm | ||
Width 11.33 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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