onsemi Isolated 2 Type N, Type P-Channel Power MOSFET, 3.9 A, 30 V Enhancement, 8-Pin SOIC

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  • 2026年5月28日 發貨
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RS庫存編號:
166-1620
製造零件編號:
SI4532DY
製造商:
onsemi
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品牌

onsemi

Channel Type

Type N, Type P

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

3.9A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

190mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2W

Minimum Operating Temperature

150°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

-55°C

Transistor Configuration

Isolated

Standards/Approvals

No

Width

4 mm

Height

1.5mm

Length

5mm

Number of Elements per Chip

2

Automotive Standard

No

Enhancement Mode Dual MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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