Infineon OptiMOS 3 Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-263

此圖片僅供參考,請參閲產品詳細資訊及規格

暫時無法供應
我們無法確定此產品何時有貨,RS 預計將其從我們的產品目錄中移除。
RS庫存編號:
165-8268
製造零件編號:
IPB083N10N3GATMA1
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS 3

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

15.1mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

125W

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

42nC

Maximum Operating Temperature

175°C

Width

9.45 mm

Height

4.57mm

Length

10.31mm

Standards/Approvals

No

Automotive Standard

No

不適用

COO (Country of Origin):
CN

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

相關連結