Infineon HEXFET Type P-Channel MOSFET, 5.8 A, 30 V Enhancement, 6-Pin TSOP

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RS庫存編號:
165-8190
製造零件編號:
IRFTS9342TRPBF
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

5.8A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

TSOP

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

66mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

-1.2V

Typical Gate Charge Qg @ Vgs

12nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1.3mm

Length

3mm

Standards/Approvals

No

Width

1.75 mm

Automotive Standard

No

COO (Country of Origin):
CN

Infineon HEXFET Series MOSFET, 5.8A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRFTS9342TRPBF


This MOSFET is designed for high efficiency across various applications, playing a critical role in electronic circuits that require enhanced performance and dependability. Its low on-resistance and significant current-handling capabilities contribute to energy efficiency and system stability in automation and electrical applications.

Features & Benefits


• Low Rds(on) improves energy efficiency

• Continuous drain current support of 5.8 A for effective performance

• Maximum drain-source voltage of 30 V ensures durability

• Surface mount design allows for compact, efficient layouts

• Operating temperature range of -55°C to +150°C enhances adaptability

Applications


• Used in battery-operated DC motor inverters

• Employed for system or load switching in varied circuits

• Applicable for drive operations within automation systems

• Utilised in power management systems for improved efficiency

How does this component perform under extreme temperatures?


It operates effectively within a wide temperature range from -55°C to +150°C, ensuring dependability in various environments.

What is the benefit of the low on-resistance feature?


A low Rds(on) Value decreases power loss in applications, leading to enhanced overall efficiency and thermal performance.

Can this device handle pulsed currents?


Yes, it can manage pulsed drain currents effectively, making it suitable for dynamic applications in electronics.

How is it mounted in circuits?


The device is designed for surface mount applications, facilitating Compact assembly and efficient space utilisation on PCBs.

What considerations should be taken when handling this component?


Users should ensure proper handling due to its sensitivity to voltage levels, adhering to specified maximum gate-source voltage limits.

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