製造零件編號

Vishay TrenchFET Gen III Type P-Channel MOSFET, 35 A, 20 V Enhancement, 8-Pin PowerPAK 1212-8

RS庫存編號:: 165-6920
製造零件編號:: SIS415DNT-T1-GE3
製造商:: Vishay

Vishay TrenchFET Gen III Type P-Channel MOSFET, 35 A, 20 V Enhancement, 8-Pin PowerPAK 1212-8

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RS庫存編號:: 165-6920
製造零件編號:: SIS415DNT-T1-GE3
製造商:: Vishay

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產品詳細資訊

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選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	35A
	Maximum Drain Source Voltage Vds	20V
	Series	TrenchFET Gen III
	Package Type	PowerPAK 1212-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0095Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	55.5nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.1V
	Maximum Power Dissipation Pd	52W
	Maximum Gate Source Voltage Vgs	12 V
	Maximum Operating Temperature	150°C
	Height	0.8mm
	Standards/Approvals	RoHS
	Length	3.4mm
	Width	3.4 mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 35A
	Maximum Drain Source Voltage Vds 20V
	Series TrenchFET Gen III
	Package Type PowerPAK 1212-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0095Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 55.5nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.1V
	Maximum Power Dissipation Pd 52W
	Maximum Gate Source Voltage Vgs 12 V
	Maximum Operating Temperature 150°C
	Height 0.8mm
	Standards/Approvals RoHS
	Length 3.4mm
	Width 3.4 mm
	Automotive Standard No

COO (Country of Origin):: CN

Vishay TrenchFET Gen III Type P-Channel MOSFET, 35 A, 20 V Enhancement, 8-Pin PowerPAK 1212-8

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